IQD063N15NM5SCATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQD063N15NM5SCATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD063N15NM5SCATMA1
IQD063N15NM5SCATMA1 - 150V 5.1mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 β ActiveInfineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveSpecification Comparison
| Parameter | IQD063N15NM5SCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.35 | $2.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 151 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 14.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΞ© (typ) | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | β |
| Total Gate Charge (QG) at VGS=10V | 48 nC | β |
| Input Capacitance (Ciss) | 3.6 nF | β |
| Output Capacitance (Coss) | 900 pF | β |
| Reverse Transfer Capacitance (Crss) | 21 pF | β |
| Maximum Power Dissition (PD) at TC=25Β°C | 333 W | β |
| Maximum Power Dissition (PD) at TA=25Β°C | 3 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 C to +175 C |
| Package | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta | β | 66 A |
| Pulsed Drain Current (IDM) at Tc | β | 700 A |
| On-State Resistance (RDS(on)) max | β | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 278 W |
| MSL Level | β | 1 (unlimited) |
| Marking | β | IQDH35N03LM5S |