IQD063N15NM5SCATMA1 vs IQDH35N03LM5SCATMA1 比較
詳細並排比較 IQD063N15NM5SCATMA1 由 Infineon 與 IQDH35N03LM5SCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ 啟用中規格比較
| 參數 | IQD063N15NM5SCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 151 A | — |
| Continuous Drain Current (ID) at TA=25°C | 14.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΩ (typ) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | — |
| Total Gate Charge (QG) at VGS=10V | 48 nC | — |
| Input Capacitance (Ciss) | 3.6 nF | — |
| Output Capacitance (Coss) | 900 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Maximum Power Dissition (PD) at TC=25°C | 333 W | — |
| Maximum Power Dissition (PD) at TA=25°C | 3 W | — |
| 工作溫度範圍 | -55°C to +175°C | -55 C to +175 C |
| 封裝 | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| MSL 等級 | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |