IQD063N15NM5SCATMA1 vs IQDH35N03LM5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQD063N15NM5SCATMA1 sa pamamagitan ng Infineon at IQDH35N03LM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ NakahandaInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQD063N15NM5SCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 151 A | — |
| Continuous Drain Current (ID) at TA=25°C | 14.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΩ (typ) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | — |
| Total Gate Charge (QG) at VGS=10V | 48 nC | — |
| Input Capacitance (Ciss) | 3.6 nF | — |
| Output Capacitance (Coss) | 900 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Maximum Power Dissition (PD) at TC=25°C | 333 W | — |
| Maximum Power Dissition (PD) at TA=25°C | 3 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55 C to +175 C |
| Packhaging | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Level ng MSL | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |