IQDH35N03LM5SCATMA1 vs IQD063N15NM5SCATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQDH35N03LM5SCATMA1 tarafından Infineon ve IQD063N15NM5SCATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifInfineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQDH35N03LM5SCATMA1 | IQD063N15NM5SCATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Transistor Türü | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Paket | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-WHSON-8-U02 (WHSON-8 with exposed pad) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C | -55°C to +175°C |
| MSL Seviyesi | 1 (unlimited) | — |
| RoHS Durumu | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| Series | — | OptiMOS™ 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 151 A |
| Continuous Drain Current (ID) at TA=25°C | — | 14.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) at VGS=10V | — | 5.1 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | 6.32 mΩ (typ) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.8 V (max) |
| Total Gate Charge (QG) at VGS=10V | — | 48 nC |
| Input Capacitance (Ciss) | — | 3.6 nF |
| Output Capacitance (Coss) | — | 900 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |
| Maximum Power Dissition (PD) at TC=25°C | — | 333 W |
| Maximum Power Dissition (PD) at TA=25°C | — | 3 W |