IQDH88N06LM5SCATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IQDH88N06LM5SCATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH88N06LM5SCATMA1
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IQDH88N06LM5SCATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.55 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IQDH88N06LM5SCATMA1 | β |
| Series | OptiMOS 5 | β |
| Technology | N-Channel MOSFET (OptiMOS 5) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Ta) | 42 A | β |
| Continuous Drain Current (ID, Tc) | 447 A | β |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V | β |
| Gate-Source Voltage (VGS) | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.7 V | β |
| Total Gate Charge (Qg) | 76 nC | β |
| Input Capacitance (Ciss) | 11 nF | β |
| Output Capacitance (Coss) | 2 nF | β |
| Reverse Transfer Capacitance (Crss) | 95 pF | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| Operating Temperature Range | -55 C to +175 C | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-WHSON-8-U02 (source-down, dual-side cooling) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |