IQDH88N06LM5SCATMA1 vs ISC011N04NM7VATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH88N06LM5SCATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQDH88N06LM5SCATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IQDH88N06LM5SCATMA1 —
Series OptiMOS 5 —
Technology N-Channel MOSFET (OptiMOS 5) Trench MOSFET, silicon
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Ta) 42 A —
Continuous Drain Current (ID, Tc) 447 A —
On-State Resistance (RDS(on)) 0.7 mOhm at VGS = 10 V —
Gate-Source Voltage (VGS) +/- 20 V —
Gate Threshold Voltage (VGS(th)) 1.7 V —
Total Gate Charge (Qg) 76 nC —
Input Capacitance (Ciss) 11 nF —
Output Capacitance (Coss) 2 nF —
Reverse Transfer Capacitance (Crss) 95 pF —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Gambaran Suhu Operasi -55 C to +175 C -55 °C to +175 °C (TJ)
Kemasan PG-WHSON-8-U02 (source-down, dual-side cooling) PG-TDSON-8 (source-down)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Product Family — OptiMOS 7 Power-Transistor
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)
Aras MSL — MSL 1 (per JEDEC J-STD-020)

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