IQDH88N06LM5SCATMA1 vs ISC011N04NM7VATMA1 Perbandingan

Perbandingan bersamaan detil IQDH88N06LM5SCATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQDH88N06LM5SCATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IQDH88N06LM5SCATMA1 —
Series OptiMOS 5 —
Technology N-Channel MOSFET (OptiMOS 5) Trench MOSFET, silicon
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Ta) 42 A —
Continuous Drain Current (ID, Tc) 447 A —
On-State Resistance (RDS(on)) 0.7 mOhm at VGS = 10 V —
Gate-Source Voltage (VGS) +/- 20 V —
Gate Threshold Voltage (VGS(th)) 1.7 V —
Total Gate Charge (Qg) 76 nC —
Input Capacitance (Ciss) 11 nF —
Output Capacitance (Coss) 2 nF —
Reverse Transfer Capacitance (Crss) 95 pF —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Rentang Suhu Kerja -55 C to +175 C -55 °C to +175 °C (TJ)
Paket PG-WHSON-8-U02 (source-down, dual-side cooling) PG-TDSON-8 (source-down)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Product Family — OptiMOS 7 Power-Transistor
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)
Level MSL — MSL 1 (per JEDEC J-STD-020)

Spek dan Sumber

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