IQE008N03LM5ATMA1 vs BSC020N03LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE008N03LM5ATMA1 disebabkan oleh Infineon dan BSC020N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE008N03LM5ATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 27 A | — |
| Continuous Drain Current (ID) at TC=25°C | 253 A | — |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) | 1 V to 2.2 V (typical range, per datasheet) |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 89 W | — |
| Kemasan | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +150°C (typical MOSFET junction rating) | -55 C to +150 C (junction) |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) | — |
| Technology | OptiMOS 5, Source-Down | — |
| Status RoHS | Compliant (per LCSC listing) | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| On-State Resistance (RDS(on)) at VGS=10V | — | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc=25C | — | 96 W |
| Kemasan / Case | — | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Packaging | — | Tape & Reel |