IQE008N03LM5CGSCATMA1 vs IPC50N04S5L5R5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQE008N03LM5CGSCATMA1 tarafından Infineon ve IPC50N04S5L5R5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktifInfineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQE008N03LM5CGSCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55 °C to +175 °C |
| Paket | PG-WHTFN-9 (WHTFN) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Montaj Türü | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Polarity | N-Channel | — |
| Pin Sayısı | 9 (WHTFN with exposed thermal pads) | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| RoHS Durumu | Compliant | — |
| Klorürsüz | Yes (Infineon standard for OptiMOS 5) | — |
| Transistor Türü | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |