IQE008N03LM5CGSCATMA1 vs IPC50N04S5L5R5ATMA1 Perbandingan
Perbandingan bersamaan detil IQE008N03LM5CGSCATMA1 dari Infineon dan IPC50N04S5L5R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktifInfineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE008N03LM5CGSCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 °C to +175 °C |
| Paket | PG-WHTFN-9 (WHTFN) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Tipe Mounting | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Polarity | N-Channel | — |
| Jumlah Pin | 9 (WHTFN with exposed thermal pads) | — |
| Level MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| Status RoHS | Compliant | — |
| Bebas Halogen | Yes (Infineon standard for OptiMOS 5) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |