IQE012N03LM5CGSCATMA1 vs ISZ019N03L5SATMA1 Perbandingan

Perbandingan bersamaan detil IQE012N03LM5CGSCATMA1 dari Infineon dan ISZ019N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE012N03LM5CGSCATMA1 IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE012N03LM5CGSCATMA1 ISZ019N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) @ Ta 34 A —
Continuous Drain Current (ID) @ Tc 224 A —
Maximum RDS(on) @ VGS=10V 1.15 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
Gate Threshold Voltage (VGS(th)) 2 V (typ, per Merlin listing) 2 V (typical)
Paket PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) PG-TSDSON-8-FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 °C to +175 °C —
Level MSL 1 (per JEDEC J-STD-020, floor life unlimited) 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 (<= 40V)
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 22 A
Continuous Drain Current (ID) at TC=25C — 40 A
RDS(on) at VGS=10V — 1.9 mΩ (typical, ID=20A)
Gate-Source Voltage Rating (VGS) — ±20 V
Total Gate Charge (Qg) — 44 nC at VGS=10V
Input Capacitance (Ciss) — 2800 pF at VDS=15V
Rentang Suhu Kerja — -55C to +175C (TJ max)
RoHS / REACH — Compliant
Avalanche Rated — Yes
RG-tested — 100%

Spek dan Sumber

IQE012N03LM5CGSCATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon