IQE013N04LM6ATMA1 vs ISZ033N03LF2SATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and ISZ033N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveInfineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6ATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.68 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS 5 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 205 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | β |
| On-Resistance RDS(on) typ | 1.35 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2.35 V max @ 30 uA |
| Package | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-TSDSON-8 FL (8-pin) |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 20 A |
| Continuous Drain Current (ID) at TC=25C | β | 109 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | β | 3 W |
| Power Dissipation (PD) at TC=25C | β | 71 W |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ] |
| Operating Junction Temperature | β | -55 C to +175 C |