IQE050N08NM5CGATMA1 vs IQD020N10NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQE050N08NM5CGATMA1 by Infineon and IQD020N10NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE050N08NM5CGATMA1

IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon

IQE050N08NM5CGATMA1 ✓ Active
Infineon
IQD020N10NM5CGATMA1

IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon

IQD020N10NM5CGATMA1 ✓ Active

Specification Comparison

Parameter IQE050N08NM5CGATMA1 IQD020N10NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.75 $1.28
FET Type N-Channel
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (Ta) 16 A
Continuous Drain Current (Tc) 101 A
On-Resistance RDS(on) Max 5.0 mΩ
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 100 W
Package PG-TTFN-9-1 (Surface Mount) PG-TTFN-9-U02 (PQFN 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) OptiMOS™ 5 N-channel trench MOSFET
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value]
Operating Temperature -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical]
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating from datasheet]
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 26 A
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve]
Pulsed Drain Current (IDM) at TC=25°C 273 A
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V)
Power Dissipation (TA) 3 W
Power Dissipation (TC) 333 W
Operating Temperature Range -55°C to +175°C
Qualification Industrial grade (Infineon OptiMOS™ 5 family)

Datasheets & Resources

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