IQE050N08NM5CGATMA1 vs IQD020N10NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQE050N08NM5CGATMA1 by Infineon and IQD020N10NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IQE050N08NM5CGATMA1 IQD020N10NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Package PG-TTFN-9-1 (Surface Mount) PG-TTFN-9-U02 (PQFN 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) OptiMOS™ 5 N-channel trench MOSFET
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Operating Temperature -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating from datasheet]
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at TA=25°C — 26 A
Continuous Drain Current (ID) at TC=25°C — [DATA_NEEDED: ID at TC=25°C from datasheet curve]
Pulsed Drain Current (IDM) at TC=25°C — 273 A
Static Drain-Source On-Resistance RDS(on) max — 2.0 mΩ (at VGS=10V)
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 333 W
Operating Temperature Range — -55°C to +175°C
Qualification — Industrial grade (Infineon OptiMOS™ 5 family)

Datasheets & Resources

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