IQE220N15NM5SCATMA1 - 150V 44A OptiMOS 5 Source-Down N-MOSFET | Infineon
MPN: IQE220N15NM5SCATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.35 | $135.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
| 5,000 | $0.78 | $3,900.00 |
IQE220N15NM5SCATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in switching power supplies, motor drives, and load-management circuits. Within the broader power-management hierarchy, MOSFETs sit beneath voltage regulators and gate drivers as the active switching element; the OptiMOS 5 family from Infineon specifically targets high-frequency, high-efficiency DC-DC conversion by minimizing Figure-of-Merit (RDS(on) x Qg) to reduce both conduction and switching losses.
Key features include a logic-level compatible VGS(th) of approximately 1.7 V (typical), low gate charge Qg in the tens of nC range, and an avalanche-rated single-pulse body diode. The PG-WHSON-8-1 Source-Down package offers dual-side cooling capability - the drain tab on top and source tab on bottom can both be soldered to copper pours, achieving a junction-to-case thermal resistance roughly half that of conventional DFN packages. The device is rated for 100 W power dissipation at Tc=25 C.
Typical applications include 48 V telecom and server point-of-load converters, synchronous rectification in telecom SMPS, brushless DC motor drives, hot-swap and e-fuse circuits, and battery protection in power tools. The 150 V rating also makes it a strong candidate for industrial 24 V/36 V bus systems and solar micro-inverters. The Source-Down layout reduces PCB hot spots, enabling higher continuous current from a smaller footprint than legacy DPAK or SO-8 alternatives.
When designing with this MOSFET, ensure the gate drive reaches at least 10 V for full RDS(on) enhancement, and place the gate-driver loop within 5 mm of the gate pin to minimize ringing. The Source-Down source tab must be soldered to a sufficient copper pour (typically 1 square inch minimum) to achieve the rated 100 W thermal envelope; without it, the device will derate severely above 2-3 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and design guidance beyond the manufacturer datasheet.
Drop-in alternatives for IQE220N15NM5SCATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE220N15NM5SCATMA1 (same form factor and footprint) β differing in Package, Technology, Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IQE220N15NM5CGSCATMA1
β Drop-Inβ In Stock
$2.18 / Unit
View Datasheet βIQE220N15NM5ATMA1
β Drop-Inβ In Stock
$0.84 / Unit
View Datasheet βIQE220N15NM5SCATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (Trench >=100V) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Ta | 7 A |
| Continuous Drain Current (ID) at Tc | 44 A |
| On-State Resistance (RDS(on)) max | 22 mOhm |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 100 W |
| Package | PG-WHSON-8-1 (Source-Down) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) |
| Number of Pins | 8 |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Avalanche Rated | Yes |
| Configuration | Single |
IQE220N15NM5SCATMA1 Pin Configuration
| Pin 1 | GATE β Gate drive input, VGS referenced to SOURCE tab |
| Pin 2 | DRAIN β Drain connection (top tab, Source-Down topology) |
| Pin 3 | DRAIN β Drain connection |
| Pin 4 | DRAIN β Drain connection |
| Pin 5 | DRAIN β Drain connection |
| Pin 6 | DRAIN β Drain connection |
| Pin 7 | DRAIN β Drain connection |
| Pin 8 | DRAIN β Drain connection |
Safe Operating Area - PG-WHSON-8-1 Source-Down, Tc=25C
Typical Applications
IQE220N15NM5SCATMA1 is suitable for 6 applications: 48V Telecom SMPS Synchronous Rectification, Brushless DC Motor Drive, Hot-Swap and E-Fuse Circuits, Industrial 24V/36V Bus Switching, Solar Micro-Inverter Power Stage, Battery Protection in Power Tools.
48V Telecom SMPS Synchronous Rectification
The IQE220N15NM5SCATMA1 fits 48V telecom SMPS synchronous rectification because its 150 V VDS rating provides ample margin above the 48-60V telecom bus, while its 22 mOhm RDS(on) minimizes conduction loss in the high-current path. The OptiMOS 5 technology delivers low gate charge enabling switching frequencies above 100 kHz, reducing magnetic component size. Placed on the secondary-side low-side position of an isolated DC-DC stage, it complements a primary-side switch in LLC or full-bridge topologies. The Source-Down PG-WHSON-8-1 package halves junction-to-case thermal resistance compared to conventional DFN, sustaining continuous drain current up to 44A at Tc in densely populated rectifier slots where PCB copper area is constrained.
Recommended
Brushless DC Motor Drive
The IQE220N15NM5SCATMA1 is well-matched to brushless DC motor drive half-bridges in industrial automation and battery-powered tools because its 150 V VDS rating covers 48V battery packs and 72V industrial bus systems with safety margin. The 44A continuous drain current at Tc supports high-torque winding currents in 1-2 kW motor power classes. Its low Qg reduces gate-driver switching losses at the 20-50 kHz PWM frequencies typical of FOC motor control, improving inverter efficiency by 1-2%. The Source-Down PG-WHSON-8-1 package enables compact three-phase inverter layouts where six MOSFETs share limited PCB area, with dual-side cooling keeping junction temperatures below 100C even under hard acceleration.
Recommended
Hot-Swap and E-Fuse Circuits
The IQE220N15NM5SCATMA1 suits hot-swap and electronic fuse circuits in 48V server and telecom shelves because its 150 V VDS rating handles transient voltage spikes during live board insertion, while its avalanche-rated body diode absorbs the inrush energy from discharged bulk capacitors. The 22 mOhm RDS(on) limits steady-state voltage drop to under 100 mV at 5A load, preserving power-supply margin. The Source-Down package's superior thermal performance allows sustained 7A at Ta without additional heatsinking. Combined with a hot-swap controller like the BTS51202EKAXUMA1, it forms a complete inrush-limiting solution that protects backplane connectors from arcing during hot-plug events.
Recommended
Industrial 24V/36V Bus Switching
The IQE220N15NM5SCATMA1 is ideal for high-side switches in industrial 24V and 36V bus systems where its 150 V VDS rating provides 4x safety margin above the nominal bus voltage, withstanding load-dump transients up to 80V. The 44A continuous current rating supports multi-channel load distribution in factory automation cabinets driving solenoid valves, relays, and motor starters. Its low RDS(on) reduces dissipation in always-on power-path applications, while the Source-Down package enables through-hole-like thermal performance in a surface-mount footprint. Used as a high-side OR-ing or load-disconnect switch, it pairs naturally with industrial MCU IO expanders and isolated gate drivers for safe load management under fault conditions.
Recommended
Solar Micro-Inverter Power Stage
The IQE220N15NM5SCATMA1 fits solar micro-inverter power stages because its 150 V VDS rating covers open-circuit panel voltages up to 100V (24V/48V panels), and its low Qg enables high-frequency transformer-isolated topologies like active-clamp flyback. The 22 mOhm RDS(on) achieves peak efficiencies above 97% in synchronous rectification configurations, critical for energy-harvesting applications. The Source-Down PG-WHSON-8-1 package's compact footprint suits the small PCB areas available in micro-inverter modules mounted behind individual PV panels. Its avalanche rating provides robustness against the occasional reverse-current surge during partial shading events common in residential solar arrays.
Recommended
Battery Protection in Power Tools
The IQE220N15NM5SCATMA1 serves as a high-side battery disconnect switch in 36V-72V cordless power tools where its 150 V VDS rating provides safety margin above the 20-cell Li-ion pack voltage, and its 44A continuous rating supports peak discharge currents of 30A during heavy-load operations like drilling or cutting. The 22 mOhm RDS(on) limits voltage drop to under 700 mV at 30A, preserving battery runtime. Its avalanche rating absorbs the inductive kickback from brushed and brushless motor windings during PWM commutation. The Source-Down package allows direct PCB mounting inside the tool handle, where conventional DPAK parts would require additional heatsinking to achieve comparable thermal performance.
Recommended
Recommended Products Summary
Engineering reference data for IQE220N15NM5SCATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE220N15NM5CGSCATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|---|
| Package | PG-WHSON-8-1 (Source-Down) | PG-WHSON-8-1 - same | PG-WHSON-8-1 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V |
| RDS(on) max at VGS=10V | 22 mOhm | 22 mOhm | 22 mOhm |
| Continuous Drain Current at Tc | 44 A | 44 A | 44 A |
| Power Dissipation at Tc | 100 W | 100 W | 100 W |
| Technology Family | OptiMOS 5 (Trench >=100V) | OptiMOS 5 | OptiMOS 5 |
| Topology | Source-Down dual cooling | Source-Down | Source-Down |
| Unit Price (qty 1, as of 2026-09-15) | 1.85 USD | 1.95 USD (estimated) | 1.70 USD (estimated) |
Key Differentiators
- Source-Down dual-cooling package doubles thermal dissipation path (vs Conventional DFN-8 MOSFETs)
- 150V OptiMOS 5 technology with 22 mOhm RDS(on) (vs ISC015N06NM5ATMA1 (60V OptiMOS 5))
- Low gate charge enables high-frequency switching above 100 kHz (vs Standard 150V MOSFETs)
Design Notes
The Source-Down PG-WHSON-8-1 package achieves its 100W Tc power dissipation rating ONLY when both the bottom source tab and the top drain tab are soldered to sufficient copper. With the standard 1 square inch bottom copper pour and 0.5 square inch top thermal via array, junction-to-ambient thermal resistance is approximately 50 C/W. Without adequate bottom copper, the device derates to roughly 2-3W continuous dissipation. For high-current applications, use a 4-layer PCB with the inner layers dedicated to thermal spreading and stitch 0.3mm thermal vias directly under the exposed pad at 1mm pitch.
Source-Down topology inverts the conventional DFN land pattern - the exposed pad connects to SOURCE (not drain), and the drain pins are on the package perimeter. PCB designers MUST use the Infineon-supplied land pattern from the datasheet's package outline section, not a generic DFN footprint. Gate trace should be routed on an inner layer to minimize loop area, and a 10 Ohm gate resistor placed within 3mm of the gate pin damps high-frequency ringing. For switching above 100 kHz, add a 100k Ohm gate-source pull-down resistor to prevent accidental turn-on during power-up.
Estimated thermal calculation: at VDS=48V continuous, ID=20A load, the IQE220N15NM5SCATMA1 dissipates P = I^2 x RDS(on) = 400 x 0.022 = 8.8W. With theta_JA of 50 C/W (1 sq inch copper), junction temperature rises 440C above ambient, exceeding the 150C rating. Designers must either reduce continuous current to under 13A in this scenario, increase copper area to 4+ sq inches, or add forced air cooling. The 44A Tc rating is misleading for ambient applications - derate aggressively based on actual thermal measurement, not datasheet marketing curves.
Keep the gate-drive loop (gate-driver output -> gate pin -> source tab -> gate-driver ground) under 5mm total length to minimize parasitic inductance that causes gate ringing and potential dv/dt-induced turn-on. Place a 10-100 Ohm gate resistor close to the driver output, not the MOSFET gate, to maximize damping effect. For half-bridge configurations, route the high-side and low-side gate traces symmetrically to balance propagation delays and prevent shoot-through during complementary switching transitions.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer-grade MOSFET. For automotive applications requiring AEC-Q100, refer to Infineon's automotive OptiMOS product line.
