IQEH84NE2LM7UCGATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH84NE2LM7UCGATMA1 by Infineon and IQEH50NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH84NE2LM7UCGATMA1
IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon
IQEH84NE2LM7UCGATMA1 β ActiveInfineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH84NE2LM7UCGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.78 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 7 (Trench MOSFET) | Silicon N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at Ta | 42 A | β |
| Pulsed Drain Current (IDM) at Tc | 275 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 107 W | β |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | β |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TTFN-9-3 (surface mount, source-down) | PG-WHTFN-9-1 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | [DATA_NEEDED: pin count from datasheet pinout] | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Switching Application | Hard- and soft-switching | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 54 A |
| Continuous Drain Current (ID) at TC | β | 422 A |
| RDS(on) Max | β | 0.5 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | 2 V |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 150 W |
| Maximum Junction Temperature | β | 175 Β°C |
| Series | β | OptiMOS 7 |