IQEH84NE2LM7UCGATMA1 vs IQEH50NE2LM7UCGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQEH84NE2LM7UCGATMA1 dari Infineon dan IQEH50NE2LM7UCGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQEH84NE2LM7UCGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (Trench MOSFET) | Silicon N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 107 W | — |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TTFN-9-3 (surface mount, source-down) | PG-WHTFN-9-1 (surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | [DATA_NEEDED: pin count from datasheet pinout] | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Switching Application | Hard- and soft-switching | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |