IR2101PBF vs IR2101STRPBF Comparison

Detailed side-by-side comparison of IR2101PBF by Infineon and IR2101STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2101PBF IR2101STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration Half-Bridge (High and Low Side) Half-Bridge (High-Side and Low-Side), Independent
Input Type Non-Inverting —
Number of Drivers 2 (High-Side + Low-Side) 2
Number of Outputs 2 —
Supply Voltage (VCC/VBS) 10 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V CMOS/LSTTL
Peak Source Current 0.21 A (210 mA) —
Peak Sink Current 0.36 A —
Offset (High-Side) Voltage Up to +600 V —
Propagation Delay 160 ns —
Undervoltage Lockout Yes —
dV/dt Immunity Yes (negative transient tolerant) —
Operating Temperature -40C to +125C -40 C to +125 C
Package 8-PDIP (0.300 inch, 7.62 mm) 8-SOIC (0.154 inch, 3.90 mm Width)
Mounting Type Through-Hole Surface Mount
Packaging Tube —
RoHS Status Compliant (Pb-free PBF suffix) Compliant
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
MSL Level — MSL 3

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