IR2101PBF vs IR2101STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2101PBF sa pamamagitan ng Infineon at IR2101STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2101PBF IR2101STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Half-Bridge (High and Low Side) Half-Bridge (High-Side and Low-Side), Independent
Input Type Non-Inverting —
Number of Drivers 2 (High-Side + Low-Side) 2
Bilang ng Outputs 2 —
Supply Voltage (VCC/VBS) 10 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V CMOS/LSTTL
Peak Source Current 0.21 A (210 mA) —
Peak Sink Current 0.36 A —
Offset (High-Side) Voltage Up to +600 V —
Propagation Delay 160 ns —
Undervoltage Lockout Yes —
dV/dt Immunity Yes (negative transient tolerant) —
Temperature na Operasyon -40C to +125C -40 C to +125 C
Packhaging 8-PDIP (0.300 inch, 7.62 mm) 8-SOIC (0.154 inch, 3.90 mm Width)
Uri ng Pagpapasok Through-Hole Surface Mount
Packaging Tube —
Tindminan RoHS Compliant (Pb-free PBF suffix) Compliant
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Level ng MSL — MSL 3

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