IR2101PBF vs IR2101STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2101PBF disebabkan oleh Infineon dan IR2101STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2101PBF IR2101STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge (High and Low Side) Half-Bridge (High-Side and Low-Side), Independent
Input Type Non-Inverting —
Number of Drivers 2 (High-Side + Low-Side) 2
Bilangan Output 2 —
Supply Voltage (VCC/VBS) 10 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V CMOS/LSTTL
Peak Source Current 0.21 A (210 mA) —
Peak Sink Current 0.36 A —
Offset (High-Side) Voltage Up to +600 V —
Propagation Delay 160 ns —
Undervoltage Lockout Yes —
dV/dt Immunity Yes (negative transient tolerant) —
Suhu Operasi -40C to +125C -40 C to +125 C
Kemasan 8-PDIP (0.300 inch, 7.62 mm) 8-SOIC (0.154 inch, 3.90 mm Width)
Jenis Pemasangan Through-Hole Surface Mount
Packaging Tube —
Status RoHS Compliant (Pb-free PBF suffix) Compliant
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Aras MSL — MSL 3

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