IR2101STRPBF vs IR2181SPBF Comparison

Detailed side-by-side comparison of IR2101STRPBF by Infineon and IR2181SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2101STRPBF IR2181SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration Half-Bridge (High-Side and Low-Side), Independent —
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V, 5 V, and 15 V logic
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Package 8-SOIC (0.154 inch, 3.90 mm Width) 8-pin SOIC (SO-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -40 C to +125 C -40C to +125C
MSL Level MSL 3 1 (unlimited)
RoHS Status Compliant Compliant
Driver Configuration — Half-Bridge (High Side + Low Side)
Number of Outputs — 2 (independent high-side and low-side)
High-Side Offset Voltage — Up to +600 V
Gate Drive Supply (VCC, VB-VS) — 10 V to 20 V
Logic Supply (VDD/VSS) — 3.3 V to 20 V (logic-level compatible)
Source/Sink Drive Current — 1.9 A source / 2.3 A sink (typical)
Propagation Delay (typ.) — 140 ns (typical)
UVLO — Yes (both channels)
dV/dt Immunity — Yes (latch-immune CMOS)
Negative Transient on VS — Tolerant

Datasheets & Resources

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