IR2101STRPBF vs IR2181SPBF Vergleich

Detaillierter Direktvergleich von IR2101STRPBF von Infineon und IR2181SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2101STRPBF IR2181SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,68 $0,72
Configuration Half-Bridge (High-Side and Low-Side), Independent —
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V, 5 V, and 15 V logic
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Gehäuse 8-SOIC (0.154 inch, 3.90 mm Width) 8-pin SOIC (SO-8)
Montageart Surface Mount Surface Mount
Betriebstemperatur -40 C to +125 C -40C to +125C
MSL-Level MSL 3 1 (unlimited)
RoHS-Status Compliant Compliant
Driver Configuration — Half-Bridge (High Side + Low Side)
Anzahl der Ausgänge — 2 (independent high-side and low-side)
High-Side Offset Voltage — Up to +600 V
Gate Drive Supply (VCC, VB-VS) — 10 V to 20 V
Logic Supply (VDD/VSS) — 3.3 V to 20 V (logic-level compatible)
Source/Sink Drive Current — 1.9 A source / 2.3 A sink (typical)
Propagation Delay (typ.) — 140 ns (typical)
UVLO — Yes (both channels)
dV/dt Immunity — Yes (latch-immune CMOS)
Negative Transient on VS — Tolerant

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