IR2101STRPBF vs IR2181SPBF Perbandingan

Perbandingan bersamaan detil IR2101STRPBF dari Infineon dan IR2181SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2101STRPBF IR2181SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge (High-Side and Low-Side), Independent —
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V, 5 V, and 15 V logic
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Paket 8-SOIC (0.154 inch, 3.90 mm Width) 8-pin SOIC (SO-8)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40 C to +125 C -40C to +125C
Level MSL MSL 3 1 (unlimited)
Status RoHS Compliant Compliant
Driver Configuration — Half-Bridge (High Side + Low Side)
Jumlah Output — 2 (independent high-side and low-side)
High-Side Offset Voltage — Up to +600 V
Gate Drive Supply (VCC, VB-VS) — 10 V to 20 V
Logic Supply (VDD/VSS) — 3.3 V to 20 V (logic-level compatible)
Source/Sink Drive Current — 1.9 A source / 2.3 A sink (typical)
Propagation Delay (typ.) — 140 ns (typical)
UVLO — Yes (both channels)
dV/dt Immunity — Yes (latch-immune CMOS)
Negative Transient on VS — Tolerant

Spek dan Sumber

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