IR2181SPBF vs IR2101STRPBF Comparison

Detailed side-by-side comparison of IR2181SPBF by Infineon and IR2101STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2181SPBF IR2101STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Configuration Half-Bridge (High Side + Low Side) —
Number of Outputs 2 (independent high-side and low-side) —
High-Side Offset Voltage Up to +600 V —
Gate Drive Supply (VCC, VB-VS) 10 V to 20 V —
Logic Supply (VDD/VSS) 3.3 V to 20 V (logic-level compatible) —
Source/Sink Drive Current 1.9 A source / 2.3 A sink (typical) —
Logic Input Compatibility 3.3 V, 5 V, and 15 V logic 3.3 V / 5 V / 15 V CMOS/LSTTL
Propagation Delay (typ.) 140 ns (typical) —
UVLO Yes (both channels) —
dV/dt Immunity Yes (latch-immune CMOS) —
Negative Transient on VS Tolerant —
Operating Temperature -40C to +125C -40 C to +125 C
Package 8-pin SOIC (SO-8) 8-SOIC (0.154 inch, 3.90 mm Width)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) MSL 3
RoHS Status Compliant Compliant
Configuration — Half-Bridge (High-Side and Low-Side), Independent
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)

Datasheets & Resources

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