IR2181SPBF vs IR2101STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2181SPBF sa pamamagitan ng Infineon at IR2101STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2181SPBF IR2101STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Configuration Half-Bridge (High Side + Low Side) —
Bilang ng Outputs 2 (independent high-side and low-side) —
High-Side Offset Voltage Up to +600 V —
Gate Drive Supply (VCC, VB-VS) 10 V to 20 V —
Logic Supply (VDD/VSS) 3.3 V to 20 V (logic-level compatible) —
Source/Sink Drive Current 1.9 A source / 2.3 A sink (typical) —
Logic Input Compatibility 3.3 V, 5 V, and 15 V logic 3.3 V / 5 V / 15 V CMOS/LSTTL
Propagation Delay (typ.) 140 ns (typical) —
UVLO Yes (both channels) —
dV/dt Immunity Yes (latch-immune CMOS) —
Negative Transient on VS Tolerant —
Temperature na Operasyon -40C to +125C -40 C to +125 C
Packhaging 8-pin SOIC (SO-8) 8-SOIC (0.154 inch, 3.90 mm Width)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) MSL 3
Tindminan RoHS Compliant Compliant
Configuration — Half-Bridge (High-Side and Low-Side), Independent
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)

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