IRF1010ZPBF vs IRF3205ZSTRLPBF Comparison

Detailed side-by-side comparison of IRF1010ZPBF by Infineon and IRF3205ZSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1010ZPBF IRF3205ZSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.36 $1.45
Polarity N-Channel —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc 75 A (Tc=25C) —
Power Dissipation (Pd) at Tc 140 W (Tc=25C) —
On-Resistance (Rds on) Max [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) —
Total Gate Charge (Qg) 63 nC (typ, per Mouser listing) 76 nC
MOSFET Operating Mode Enhancement —
Package TO-220AB (3-pin + tab), Through Hole D2PAK (TO-263)
Configuration Single MOSFET —
Maximum Junction Temperature 175 C —
Mounting Type Through Hole Surface Mount
Qualification JEDEC industry standard qualification —
Avalanche Rating Improved repetitive avalanche rated —
RoHS Status Compliant (PBF = Pb-free) Compliant
Lead Status Lead Free —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage range] —
FET Type — N-Channel
Technology — HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 110 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V — 6.5 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at Tc=25C — 170 W
Operating Junction Temperature — -55C to +175C
Packaging — Tape & Reel (left reel)
MSL Level — 1
Body Diode — Avalanche-rated intrinsic

Datasheets & Resources

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