IRF1010ZPBF vs IRF3205ZSTRLPBF Comparaison
Comparaison détaillée côte à côte de IRF1010ZPBF par Infineon et IRF3205ZSTRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF1010ZPBF | IRF3205ZSTRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,36 | $1,45 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | 76 nC |
| MOSFET Operating Mode | Enhancement | — |
| Boîtier | TO-220AB (3-pin + tab), Through Hole | D2PAK (TO-263) |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| Type de montage | Through Hole | Surface Mount |
| Qualification | JEDEC industry standard qualification | — |
| Avalanche Rating | Improved repetitive avalanche rated | — |
| Statut RoHS | Compliant (PBF = Pb-free) | Compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 110 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 6.5 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| Température de jonction en fonctionnement | — | -55C to +175C |
| Packaging | — | Tape & Reel (left reel) |
| Niveau MSL | — | 1 |
| Body Diode | — | Avalanche-rated intrinsic |