IRF1010ZPBF vs IRF3205ZSTRLPBF 비교
다음의 상세 나란히 비교: IRF1010ZPBF 제조: Infineon 및 IRF3205ZSTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF1010ZPBF | IRF3205ZSTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.36 | $1.45 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | 76 nC |
| MOSFET Operating Mode | Enhancement | — |
| 패키지 | TO-220AB (3-pin + tab), Through Hole | D2PAK (TO-263) |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| 실장 유형 | Through Hole | Surface Mount |
| Qualification | JEDEC industry standard qualification | — |
| Avalanche Rating | Improved repetitive avalanche rated | — |
| RoHS 상태 | Compliant (PBF = Pb-free) | Compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 110 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 6.5 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| 동작 접합 온도 | — | -55C to +175C |
| Packaging | — | Tape & Reel (left reel) |
| MSL 레벨 | — | 1 |
| Body Diode | — | Avalanche-rated intrinsic |