IRF1010ZPBF vs IRF3205ZSTRLPBF Comparação
Comparação detalhada lado a lado de IRF1010ZPBF por Infineon e IRF3205ZSTRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRF1010ZPBF | IRF3205ZSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,36 | $1,45 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | 76 nC |
| MOSFET Operating Mode | Enhancement | — |
| Encapsulamento | TO-220AB (3-pin + tab), Through Hole | D2PAK (TO-263) |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| Tipo de montagem | Through Hole | Surface Mount |
| Qualification | JEDEC industry standard qualification | — |
| Avalanche Rating | Improved repetitive avalanche rated | — |
| Status RoHS | Compliant (PBF = Pb-free) | Compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 110 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 6.5 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| Temperatura de junção de operação | — | -55C to +175C |
| Packaging | — | Tape & Reel (left reel) |
| Nível MSL | — | 1 |
| Body Diode | — | Avalanche-rated intrinsic |