IRF2805PBF vs IRFB4020PBF Comparison
Detailed side-by-side comparison of IRF2805PBF by Infineon and IRFB4020PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF2805PBF | IRFB4020PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF2805PBF | β |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET Power MOSFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at Tc | 75 A | β |
| Continuous Drain Current (ID) at 25Β°C | 175 A (pulsed / package-limited) | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.7 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 4 V | β |
| Total Gate Charge (Qg) | 150 nC | β |
| Power Dissipation (PD) at Tc | 330 W | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Package | TO-220AB (3-pin, through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Configuration | Single N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID) at TC | β | 18 A |
| Power Dissipation (PD) at TC | β | 100 W |
| RDS(on) Maximum | β | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | β | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 1.43 C/W |
| Operating Junction Temperature | β | 175 C (max) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | β | Yes |
| Market Qualification | β | Consumer |
| Recommended Use | β | Class-D audio amplifier and high-efficiency switching applications |