IRF2805PBF vs IRFB4020PBF 比較
詳細並排比較 IRF2805PBF 由 Infineon 與 IRFB4020PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF2805PBF | IRFB4020PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF2805PBF | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET Power MOSFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Continuous Drain Current (ID) at 25°C | 175 A (pulsed / package-limited) | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 150 nC | — |
| Power Dissipation (PD) at Tc | 330 W | — |
| Maximum Junction Temperature | 175 °C | — |
| 封裝 | TO-220AB (3-pin, through-hole) | TO-220AB (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| RoHS 狀態 | Compliant (Pb-free) | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| Configuration | Single N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| 工作接面溫度 | — | 175 C (max) |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |