IRF2805PBF vs IRFB4020PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF2805PBF sa pamamagitan ng Infineon at IRFB4020PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF2805PBF IRFB4020PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF2805PBF —
FET Type N-Channel N-Channel
Technology HEXFET Power MOSFET (IR MOSFET) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc 75 A —
Continuous Drain Current (ID) at 25°C 175 A (pulsed / package-limited) —
On-Resistance RDS(on) max @ VGS=10V 4.7 mOhm —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 150 nC —
Power Dissipation (PD) at Tc 330 W —
Maximum Junction Temperature 175 °C —
Packhaging TO-220AB (3-pin, through-hole) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Tindminan RoHS Compliant (Pb-free) —
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Configuration Single N-Channel MOSFET —
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Temperature ng Junction na Operasyon — 175 C (max)
Bilang ng Pin — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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