IRF2805PBF vs IRFB4020PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF2805PBF disebabkan oleh Infineon dan IRFB4020PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF2805PBF | IRFB4020PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF2805PBF | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET Power MOSFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Continuous Drain Current (ID) at 25°C | 175 A (pulsed / package-limited) | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 150 nC | — |
| Power Dissipation (PD) at Tc | 330 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Kemasan | TO-220AB (3-pin, through-hole) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Status RoHS | Compliant (Pb-free) | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Configuration | Single N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| Suhu Hubungan Operasi | — | 175 C (max) |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |