IRF2907ZSTRLPBF vs IRF1010ZPBF Comparison

Detailed side-by-side comparison of IRF2907ZSTRLPBF by Infineon and IRF1010ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF2907ZSTRLPBF IRF1010ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.36
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Continuous Drain Current (TC=25°C) 170 A —
Continuous Drain Current (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Operating Junction Temperature -55 C to +175 C —
Technology IR HEXFET / IR MOSFET —
Package D2PAK (TO-263AB) surface mount TO-220AB (3-pin + tab), Through Hole
Pin Count 3 (Gate, Drain, Source) —
Mounting Type Surface Mount (SMD) Through Hole
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
RoHS Status Compliant Compliant (PBF = Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) Improved repetitive avalanche rated
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
Total Gate Charge (Qg) — 63 nC (typ, per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

Datasheets & Resources

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