IRF2907ZSTRLPBF vs IRF1010ZPBF Vergleich

Detaillierter Direktvergleich von IRF2907ZSTRLPBF von Infineon und IRF1010ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF2907ZSTRLPBF IRF1010ZPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,55 $1,36
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Kontinuierlicher Drain-Strom (TC=25°C) 170 A —
Kontinuierlicher Drain-Strom (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C —
Technology IR HEXFET / IR MOSFET —
Gehäuse D2PAK (TO-263AB) surface mount TO-220AB (3-pin + tab), Through Hole
Pin-Anzahl 3 (Gate, Drain, Source) —
Montageart Surface Mount (SMD) Through Hole
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
RoHS-Status Compliant Compliant (PBF = Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) Improved repetitive avalanche rated
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
Total Gate Charge (Qg) — 63 nC (typ, per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

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