IRF2907ZSTRLPBF vs IRF1010ZPBF Comparación
Comparación detallada lado a lado de IRF2907ZSTRLPBF por Infineon y IRF1010ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF2907ZSTRLPBF | IRF1010ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $1,36 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| Corriente de drenador continua (TC=25°C) | 170 A | — |
| Corriente de drenador continua (TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Technology | IR HEXFET / IR MOSFET | — |
| Encapsulado | D2PAK (TO-263AB) surface mount | TO-220AB (3-pin + tab), Through Hole |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Tipo de montaje | Surface Mount (SMD) | Through Hole |
| Packaging | Tape and Reel (left orientation) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Estado RoHS | Compliant | Compliant (PBF = Pb-free) |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | Improved repetitive avalanche rated |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc | — | 75 A (Tc=25C) |
| Power Dissipation (Pd) at Tc | — | 140 W (Tc=25C) |
| On-Resistance (Rds on) Max | — | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) |
| Total Gate Charge (Qg) | — | 63 nC (typ, per Mouser listing) |
| MOSFET Operating Mode | — | Enhancement |
| Configuration | — | Single MOSFET |
| Maximum Junction Temperature | — | 175 C |
| Qualification | — | JEDEC industry standard qualification |
| Lead Status | — | Lead Free |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage range] |