IRF3710ZPBF vs IRF1310NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF3710ZPBF disebabkan oleh Infineon dan IRF1310NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF3710ZPBF | IRF1310NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Advanced Process) | HEXFET |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 59 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 160 W | — |
| On-Resistance RDS(on) at VGS=10V | 18 mOhm (typical) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 82 nC (typical) | 73.3 nC |
| Maximum Junction Operating Temperature | 175 C | — |
| Gate Drive Voltage (Optimized) | 10 V | — |
| Kemasan | TO-220AB (through-hole, 3 pins) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Pin Configuration | G-D-S (Gate-Drain-Source, standard TO-220) | — |
| Qualification Standard | JEDEC, Normal Level | — |
| Status RoHS | Compliant (PBF suffix) | Compliant (PBF suffix) |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 36 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs value] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Maximum Junction Temperature | — | 175 C |
| Gambaran Suhu Operasi | — | -55 C to +175 C |