IRF4905LPBF vs IRF4905SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905LPBF disebabkan oleh Infineon dan IRF4905SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF4905LPBF IRF4905SPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V —
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Suhu Hubungan Operasi -55C to +150C -55 C to +150 C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Kemasan TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263) surface mount
Technology HEXFET (IR MOSFET) HEXFET, planar cell
Jenis Pemasangan Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID, Tc=25C) — -42 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) — 170 W
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Status RoHS — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

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