IRF4905LPBF vs IRF4905SPBF Perbandingan

Perbandingan bersamaan detil IRF4905LPBF dari Infineon dan IRF4905SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF4905LPBF IRF4905SPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V —
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Suhu Hubung Kerja -55C to +150C -55 C to +150 C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Paket TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263) surface mount
Technology HEXFET (IR MOSFET) HEXFET, planar cell
Tipe Mounting Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID, Tc=25C) — -42 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) — 170 W
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Status RoHS — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

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