IRF4905STRLPBF vs IRF4905LPBF Comparison

Detailed side-by-side comparison of IRF4905STRLPBF by Infineon and IRF4905LPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF4905LPBF

IRF4905LPBF - P-Ch -55V 74A 20mOhm HEXFET MOSFET | Infineon

IRF4905LPBF βœ“ Active

Specification Comparison

Parameter IRF4905STRLPBF IRF4905LPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.98
FET Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at Tc=25C -74 A β€”
Pulsed Drain Current (IDM) -260 A β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
On-Resistance RDS(on) at VGS=-10V 20 mOhm β€”
Total Gate Charge (Qg) 120 nC β€”
Power Dissipation (PD) at Tc=25C 170 W β€”
Operating Temperature Range -55C to +175C β€”
Package D2PAK (TO-263) TO-262 (I2PAK), through-hole, 3-pin
Mounting Type Surface Mount Through Hole
Technology HEXFET (Planar) HEXFET (IR MOSFET)
MSL Level 1 β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Polarity β€” P-Channel
Drain-Source Voltage (Vds) β€” -55 V
Continuous Drain Current (Id) @ Tc=25C β€” -74 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ Vgs=-10V β€” 20 mOhm
Gate Threshold Voltage Vgs(th) typ β€” [DATA_NEEDED: Vgs(th) typical]
Gate-Source Voltage (Vgs) max β€” Β±20 V
Total Power Dissipation (Ptot) @ Tc=25C β€” 200 W
Operating Junction Temperature β€” -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC value]
Rise Time (tr) typ β€” [DATA_NEEDED: rise time]
Fall Time (tf) typ β€” [DATA_NEEDED: fall time]
Lead-Free / RoHS β€” Yes (PbF suffix)
Avalanche Rated β€” Yes

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