IRF4905STRLPBF vs IRF4905LPBF Perbandingan
Perbandingan bersamaan detil IRF4905STRLPBF dari Infineon dan IRF4905LPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF4905STRLPBF | IRF4905LPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | D2PAK (TO-263) | TO-262 (I2PAK), through-hole, 3-pin |
| Tipe Mounting | Surface Mount | Through Hole |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET) |
| Level MSL | 1 | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | — | -74 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ Vgs=-10V | — | 20 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Total Power Dissipation (Ptot) @ Tc=25C | — | 200 W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| Rise Time (tr) typ | — | [DATA_NEEDED: rise time] |
| Fall Time (tf) typ | — | [DATA_NEEDED: fall time] |
| Lead-Free / RoHS | — | Yes (PbF suffix) |
| Avalanche Rated | — | Yes |