IRF4905STRLPBF vs IRF4905LPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905STRLPBF sa pamamagitan ng Infineon at IRF4905LPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF4905STRLPBF IRF4905LPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -74 A —
Pulsed Drain Current (IDM) -260 A —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) at VGS=-10V 20 mOhm —
Total Gate Charge (Qg) 120 nC —
Power Dissipation (PD) at Tc=25C 170 W —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging D2PAK (TO-263) TO-262 (I2PAK), through-hole, 3-pin
Uri ng Pagpapasok Surface Mount Through Hole
Technology HEXFET (Planar) HEXFET (IR MOSFET)
Level ng MSL 1 —
Tindminan RoHS Compliant —
Lead-Free Yes —
Polarity — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Gate-Source Voltage (Vgs) max — ±20 V
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
Temperature ng Junction na Operasyon — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Lead-Free / RoHS — Yes (PbF suffix)
Avalanche Rated — Yes

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