IRF4905STRLPBF vs IRF4905LPBF 比較
詳細並排比較 IRF4905STRLPBF 由 Infineon 與 IRF4905LPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF4905STRLPBF | IRF4905LPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | D2PAK (TO-263) | TO-262 (I2PAK), through-hole, 3-pin |
| 安裝類型 | Surface Mount | Through Hole |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET) |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | — | -74 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ Vgs=-10V | — | 20 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Total Power Dissipation (Ptot) @ Tc=25C | — | 200 W |
| 工作接面溫度 | — | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| Rise Time (tr) typ | — | [DATA_NEEDED: rise time] |
| Fall Time (tf) typ | — | [DATA_NEEDED: fall time] |
| Lead-Free / RoHS | — | Yes (PbF suffix) |
| Avalanche Rated | — | Yes |