IRF520NPBF vs IRFU9024NPBF Comparison

Detailed side-by-side comparison of IRF520NPBF by Infineon and IRFU9024NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFU9024NPBF

IRFU9024NPBF - -55V P-Ch HEXFET 11A 175mOhm TO-251 | Infineon

IRFU9024NPBF βœ“ Active

Specification Comparison

Parameter IRF520NPBF IRFU9024NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.46
Manufacturer Infineon Technologies β€”
Series HEXFET β€”
FET Type N-Channel β€”
Drain-to-Source Voltage (V_DSS) 100 V β€”
Continuous Drain Current (I_D) at Tc 9.7 A β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] β€”
Gate-to-Source Voltage (V_GS) max Β±20 V β€”
R_DS(on) max at V_GS=10V 200 mOhm β€”
Total Gate Charge (Q_g) 16.7 nC β€”
Power Dissipation (P_D) at Tc 48 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-220AB (through-hole) IPAK (TO-251AA) Through-Hole
Mounting Type Through Hole Through Hole
MSL Level 1 (unlimited) β€”
RoHS Status Compliant (Pb-free) β€”
Lead-Free Finish Yes (PBF suffix) β€”
Technology HEXFET (vertical DMOS) β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at Tc=25C β€” -11 A
Pulsed Drain Current (IDM) β€” -44 A
Drain-Source On-Resistance (RDS(on)) at VGS=-10V β€” 175 mOhm max
Gate-Source Threshold Voltage (VGS(th)) β€” -4 V max
Total Gate Charge (Qg) β€” 12.7 nC
Input Capacitance (Ciss) β€” 170 pF
Output Capacitance (Coss) β€” 92 pF
Reverse Transfer Capacitance (Crss) β€” 350 pF
Power Dissipation (PD) at Tc=25C β€” 38 W
Operating Junction Temperature β€” -55C to +175C
Lead-Free / RoHS Status β€” Lead-Free, RoHS Compliant
Avalanche Rated β€” Yes
Generation β€” Fifth-Generation HEXFET

Datasheets & Resources

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