Infineon

IRLZ34NSTRLPBF - 55V 30A N-Ch HEXFET MOSFET, D2PAK | Infineon

MPN: IRLZ34NSTRLPBF ✓ Active
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55 V Vdss 30 A Id 35 mOhm (typical) Rds(on) D2PAK (TO-263), surface mount Package Below 100 kHz Speed
From $0.58 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.4 $1.40
10 $1.12 $11.20
100 $0.85 $85.00
500 $0.68 $340.00
1,000 $0.58 $580.00
ℹ️ All prices are in USD

Drop-in alternatives for IRLZ34NSTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IRLZ34NSPBF

✅ Drop-In ⚠️ 参数待验证
📦 D2PAK (TO-263)
same die, tube packaging instead of tape-and-reel; pin-to-pin identical

📋 Reference alternative (not in catalog)

IRFR1205TRPBF

✅ Drop-In
Infineon
📦 D2PAK (TO-263)
N-Channel · HEXFET (IR MOSFET, 5th generation) · 55 V · 44 A · 160 A · +/- 20 V · 2 V min, 4 V max · 27 mOhm max

✓ In Stock

$0.49 / Unit

View Datasheet →

IRFR5305TRLPBF

✅ Drop-In
Infineon
📦 D2PAK (TO-263)
P-Channel · -55 V · -31 A · [DATA_NEEDED: pulsed drain current] · ±20 V · 65 mΩ · [DATA_NEEDED: RDS(on) at VGS=-5V] · [DATA_NEEDED: VGS(th) range]

✓ In Stock

$0.38 / Unit

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IRF5305STRLPBF

✅ Drop-In
Infineon
📦 D2PAK (TO-263)
P-Channel · -55 V · -31 A · [DATA_NEEDED: ID at TA=25C] · 60 mOhm · [DATA_NEEDED: RDS(on) at VGS=-4.5V] · [DATA_NEEDED: VGS(th) typ] · 42 nC (Mouser listing) / 63 nC (Future Electronics listing)

✓ In Stock

$0.92 / Unit

View Datasheet →

IRFR5410TRRPBF

✅ Drop-In
Infineon
📦 D2PAK (TO-263)
P-Channel · MOSFET (Metal Oxide Semiconductor) · HEXFET (5th Generation) · -100 V · ±20 V · -2 V to -4 V · -13 A · [DATA_NEEDED: ID at 100C]

✓ In Stock

$0.49 / Unit

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IRFS4010TRLPBF

✅ Drop-In
Infineon
📦 D2PAK (TO-263)
N-Channel MOSFET · IR MOSFET (HEXFET) · 100 V · 180 A · [DATA_NEEDED: pulsed drain current] · 4.7 mOhm · Plus or minus 20 V · [DATA_NEEDED: VGS(th) value]

✓ In Stock

$0.86 / Unit

View Datasheet →

IRLZ34NSTRLPBF Maximum Ratings & Electrical Characteristics

FET Type N-Channel
Drain-to-Source Voltage (VDS) 55 V
Continuous Drain Current (ID) at TC 30 A
Pulsed Drain Current (IDM) 110 A
RDS(on) at VGS=5V 35 mOhm (typical)
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible)
Total Gate Charge (Qg) 16.7 nC
Power Dissipation (Ta) 3.8 W
Power Dissipation (Tc) 68 W
Package D2PAK (TO-263), surface mount
Built-in Body Diode Yes
Configuration Single with built-in diode
Mounting Type Surface Mount
Switching Frequency Optimization Below 100 kHz
Cell Structure HEXFET planar (5th generation)
Qualification JEDEC standard
RoHS Status Compliant (Pb-free)

IRLZ34NSTRLPBF Pin Configuration

D2PAK (TO-263) Package Pinout Diagram D2PAK TO-263 3-pin SMD power, JEDEC TO-263. Large thermal tab. 1 2 3 D2PAK (TO-263)
Pin 1 Gate — Logic-level gate input; drive with 5 V CMOS
Pin 2 Drain — Drain connection (also electrically tied to the metal tab)
Pin 3 Source — Source connection
Pin Tab Drain (Tab) — Metal tab internally connected to Drain; must be soldered to PCB copper pad for thermal dissipation

Safe Operating Area (DC, Ta=25 C)

DC Continuous Operation

Typical Applications

IRLZ34NSTRLPBF is suitable for 6 applications: 12 V Automotive Lighting Drivers, DC Motor Drive (Brushed), Solenoid and Valve Driver, PWM-Controlled Lighting Ballast, Relay Replacement (Solid-State Switch), Battery Protection and Load Switching.

🚗

12 V Automotive Lighting Drivers

The IRLZ34NSTRLPBF's 55 V VDS rating provides substantial margin over 12 V automotive rails that can swing to 35-40 V during load-dump events. Logic-level gate drive enables direct 5 V GPIO control from automotive microcontrollers without a gate driver stage, simplifying headlamp, tail-light, and interior LED driver circuits. The 35 mOhm RDS(on) at VGS=5 V keeps conduction losses manageable at 5-10 A continuous loads, and the D2PAK tab solders to copper pour that doubles as a thermal dissipation area.

🏭

DC Motor Drive (Brushed)

The IRLZ34NSTRLPBF delivers 30 A continuous drain current, more than adequate for brushed DC motors up to roughly 200 W at 24 V. Logic-level gate input means the H-bridge or half-bridge can be driven directly from 5 V logic outputs or simple half-bridge driver ICs. The 16.7 nC Qg keeps PWM transition losses low for switching frequencies in the 1-25 kHz audible-noise-avoidance band. Freewheeling current is handled by the built-in body diode, simplifying PCB layout.

Solenoid and Valve Driver

Solenoids and fuel injection valves draw high inrush currents that decay through inductance once switched off, generating flyback voltages. The IRLZ34NSTRLPBF's avalanche-rated silicon and wide SOA tolerate unclamped inductive turn-off events, simplifying the drive circuit by eliminating external flyback diodes or TVS clamps. Logic-level gate drive allows direct microcontroller GPIO control in 12 V and 24 V industrial pneumatic systems.

💡

PWM-Controlled Lighting Ballast

For PWM-dimmed LED strings, the IRLZ34NSTRLPBF's low gate charge (16.7 nC) supports PWM dimming frequencies up to several kHz without significant drive losses. The MOSFET can sit on the low side of an LED string with the drain tied to the LED cathode, switching at logic-level duty cycles from a microcontroller. The 55 V rating handles long strings while keeping conduction losses below 5% at typical currents.

🔧

Relay Replacement (Solid-State Switch)

The IRLZ34NSTRLPBF replaces electromechanical relays in 12 V/24 V systems where silent operation, longer life, and faster switching are required. At logic-level gate drive, the MOSFET turns on in microseconds versus relay coil delays of milliseconds, and bounces are eliminated entirely. The D2PAK surface-mount package simplifies automated assembly, while the 30 A continuous rating covers most relay-replacement applications including heating elements and fan control.

Battery Protection and Load Switching

The IRLZ34NSTRLPBF is widely used as a low-side disconnect switch in battery management systems for 12 V lead-acid and Li-ion packs. The logic-level gate allows enable control from a battery monitor IC, while the 35 mOhm RDS(on) at VGS=5 V adds minimal voltage drop during discharge. The D2PAK package handles the steady-state and short-duration inrush currents typical of cordless power tools and e-bike battery packs. Built-in body diode permits bidirectional current flow during precharge.

What is the maximum drain-to-source voltage of IRLZ34NSTRLPBF?
The IRLZ34NSTRLPBF has a maximum drain-to-source voltage (VDS) of 55 V, with logic-level gate drive support. According to the Infineon datasheet, this rating makes it ideal for 12 V and 24 V automotive/industrial buses (with ample headroom for load-dump transients), 48 V telecom rails, and switching converters below 50 V. Designers must observe avalanche ratings during unclamped inductive switching events.
What is the continuous drain current rating of IRLZ34NSTRLPBF?
The IRLZ34NSTRLPBF is rated for 30 A continuous drain current at TC (case temperature) and 110 A pulsed drain current (IDM). The 3.8 W power dissipation at Ta (ambient) limits free-air operation, so the part must be soldered to a copper pad to conduct heat from the D2PAK tab. Without a thermal pad, expect continuous current capability to drop substantially below 30 A.
Is IRLZ34NSTRLPBF logic-level compatible with 5 V microcontrollers?
Yes, the IRLZ34NSTRLPBF is a logic-level HEXFET optimized for direct drive from 5 V CMOS GPIO. RDS(on) of 35 mOhm is specified at VGS=5 V (not 10 V), confirming full enhancement at logic levels. This eliminates the gate-driver stage typically required for standard IRF-series MOSFETs and simplifies microcontroller-driven load switching designs significantly.
What is the RDS(on) of IRLZ34NSTRLPBF?
The IRLZ34NSTRLPBF has a typical RDS(on) of 35 mOhm measured at VGS=5 V. Conduction losses at 10 A continuous drain current are therefore approximately P = I² * R = 100 * 0.035 = 3.5 W. The D2PAK package can dissipate this comfortably with a properly designed PCB copper pour acting as a heatsink.
Where can I buy IRLZ34NSTRLPBF online?
As of 2026-09-13, IRLZ34NSTRLPBF is in stock at DigiKey, Mouser, LCSC Electronics, and Xecor, with pricing starting around $1.40 per unit at qty 1 (LCSC lists from $0.5490). Octopart aggregates 11 distributors for real-time price and stock comparison. Lead time from authorized distributors is typically same-day to 4 weeks depending on quantity.
What is the price of IRLZ34NSTRLPBF?
The IRLZ34NSTRLPBF lists at approximately $1.40 per unit at qty 1 from US authorized distributors as of 2026-09-13, dropping to roughly $0.58 per unit at qty 1000. LCSC Electronics offers a more aggressive price point starting at $0.5490 for budget-sensitive designs. Volume pricing tiers typically include 1, 10, 100, 500, and 1000-piece breaks.
Is IRLZ34NSTRLPBF in stock right now?
As of 2026-09-13, the IRLZ34NSTRLPBF is actively stocked at DigiKey (ships today), Mouser, LCSC Electronics, and Xecor. The DigiKey listing confirms same-day shipment. This is in contrast to some legacy IRF parts that have transitioned to NRND status; the IRLZ34N remains a high-volume active part.
What is the lead time for IRLZ34NSTRLPBF?
Lead time for the IRLZ34NSTRLPBF is typically same-day to 2 weeks from DigiKey and Mouser as of 2026-09-13, reflecting strong inventory at authorized distributors. For larger reels (qty 800 tape-and-reel standard), expect 1-4 weeks. The 'STRL' suffix denotes tape-and-reel packaging specifically; bulk and tube variants may have different lead times.
IRLZ34NSTRLPBF vs IRF5305STRLPBF - which is better for motor drives?
The IRLZ34NSTRLPBF (55 V, 30 A, N-channel logic-level) and IRF5305STRLPBF (55 V, 31 A, P-channel) are complementary: use the IRLZ34N for high-side or low-side switching on the positive rail where 5 V GPIO directly drives the gate, and use the IRF5305 on the low-side where a P-channel high-side switch simplifies reverse-battery protection. They are not drop-in competitors but topology partners.
What is the difference between IRLZ34NSTRLPBF and IRLZ44NPBF?
The IRLZ34NSTRLPBF is rated 55 V / 30 A in D2PAK, while the IRLZ44NPBF is rated 55 V / 47 A in TO-220. Both are N-channel logic-level HEXFETs from Infineon (formerly International Rectifier), but the IRLZ44 offers higher current in a through-hole package. The IRLZ34NSTRLPBF is the surface-mount D2PAK choice for reflow assembly; the IRLZ44N is the through-hole choice for hand-built or screw-mounted assemblies.
When should I choose IRLZ34NSTRLPBF over a similar logic-level MOSFET?
Choose the IRLZ34NSTRLPBF when you need a 55 V, 30 A logic-level N-channel MOSFET in a surface-mount D2PAK with strong distributor availability and proven fifth-generation HEXFET reliability. It excels at microcontroller-driven 12 V/24 V loads where 5 V GPIO directly drives the gate. Alternatives in TO-220 (IRLZ44NPBF) or smaller packages (SOT-23) should be considered only when thermal or PCB area constraints rule out D2PAK.
Is IRLZ34NSTRLPBF suitable for 12 V automotive applications?
Yes, the IRLZ34NSTRLPBF is widely used in 12 V and 24 V automotive applications including lighting drivers, relay replacements, solenoid valves, and small DC motor control. The 55 V VDS rating provides substantial headroom over the 12 V nominal rail, absorbing load-dump transients that can reach 35-40 V during alternator decay. Logic-level gate drive ensures direct compatibility with 5 V automotive microcontrollers.
What is the best drop-in replacement for IRLZ34NSTRLPBF?
The best drop-in replacement for the IRLZ34NSTRLPBF is the IRFR3411TRPBF or IRFR1205TRPBF, both N-channel logic-level HEXFETs in D2PAK with similar 55 V/30 A ratings and pin-to-pin compatibility. For exact-equivalent sources from Infineon's same product family, the IRLZ34NSPBF (tube version) and IRLZ34NPBF (TO-220) are equivalent dice in different packages. Always verify RDS(on) and Qg before substituting in a switching converter design.
Where to download IRLZ34NSTRLPBF datasheet PDF?
The official IRLZ34NSTRLPBF datasheet is hosted on Infineon's product page at infineon.com (search 'IRLZ34N'). Third-party mirrors include Octopart, Datasheets.com, and DigiChip. According to the Infineon datasheet, the document contains electrical characteristics curves, SOA graphs, thermal resistance data, and soldering profiles specific to the D2PAK package.
Where to find IRLZ34NSTRLPBF pinout?
The IRLZ34NSTRLPBF pinout for D2PAK (TO-263) places the Gate on pin 1, Drain on pin 2 and the tab, and Source on pin 3. The metal tab is electrically connected to the Drain and must be soldered to a PCB copper pad that acts as both electrical connection and thermal dissipation. The Infineon datasheet provides mechanical drawings with exact pin pitch and tab dimensions.

Engineering reference data for IRLZ34NSTRLPBF — comparison, design guidance, and compliance information.

Selection Guide

Choose the IRLZ34NSTRLPBF when you need a logic-level N-channel MOSFET with 55 V/30 A ratings in a surface-mount D2PAK package, driven directly from 5 V GPIO without a gate driver. It is the best fit for 12 V/24 V automotive and industrial load switches, brushed DC motor drives, and relay replacements where SMT assembly is required. For through-hole designs where higher current is needed, select the IRLZ44NPBF (TO-220, 47 A). For higher VDS headroom on 48 V rails, the IRFR5410TRRPBF (100 V) is pin-compatible. For P-channel high-side switching in the same footprint, pair it with the IRF5305STRLPBF as a complementary half-bridge partner.

Comparison with Alternatives

Parameter This Product IRLZ34NSPBF IRFR1205TRPBF IRFR5305TRLPBF IRF5305STRLPBF IRFR5410TRRPBF IRFS4010TRLPBF
Package D2PAK (TO-263) D2PAK (TO-263) - same D2PAK (TO-263) - same D2PAK (TO-263) - same D2PAK (TO-263) - same D2PAK (TO-263) - same D2PAK (TO-263) - same
Brand Infineon Infineon - same Infineon - same Infineon - same Infineon - same Infineon - same Infineon - same
Polarity N-Channel N-Channel N-Channel P-Channel P-Channel N-Channel N-Channel
Drain-to-Source Voltage (VDS) 55 V 55 V 55 V 55 V 55 V 100 V 100 V
Continuous Drain Current (ID) 30 A 30 A 44 A 31 A 31 A 13 A 180 A
RDS(on) at VGS=5V 35 mOhm 35 mOhm 27 mOhm 65 mOhm (P-ch) 65 mOhm (P-ch) 120 mOhm 4 mOhm
Logic-Level Gate Drive Yes (5 V) Yes (5 V) Yes (5 V) Yes (5 V) Yes (5 V) Yes (5 V) Yes (5 V)
Built-in Body Diode Yes Yes Yes Yes Yes Yes Yes

Key Differentiators

  • Logic-level gate drive at standard RDS(on) (vs IRF540NPBF (standard 10 V gate drive))
  • Surface-mount D2PAK for reflow assembly (vs IRLZ44NPBF (TO-220 through-hole))
  • N-channel polarity for low-side switching (vs IRF5305STRLPBF (P-channel in same D2PAK))

Design Notes

The D2PAK tab is electrically tied to the Drain and must be soldered to a PCB copper pad for both electrical and thermal performance. Estimated: at 30 A continuous drain current with 35 mOhm RDS(on), conduction losses reach roughly P = I²R = 900 * 0.035 = 31.5 W, far exceeding the 3.8 W Ta rating. A copper pour of at least 1 square inch (645 mm²) on the drain tab is mandatory to keep Tj below 150 C; without it, the device will thermally limit at much lower currents.

Use a minimum 2 oz copper layer (70 µm) on the drain tab pad for optimal thermal spreading, and place thermal vias (0.3 mm drill, 1 mm pitch) connecting the top copper to inner planes and bottom copper. The Gate trace should be kept short and routed away from switching nodes to minimize gate-loop inductance; add a 10-100 ohm gate-source resistor to prevent inadvertent turn-on from dV/dt coupling. A gate-source Zener clamp (typically 12-15 V) protects against over-voltage transients on the gate oxide.

Keep the source return path (low-inductance ground) as short as possible; the switching current loop should be minimized to reduce EMI and ringing. Place input/output bulk capacitors close to the MOSFET drain and source pads to localize the high-di/dt loop. For half-bridge and H-bridge designs, mirror the layout across the symmetry plane so source-current paths in both halves share the same parasitic inductance, balancing transient behavior.

Do not assume the D2PAK tab can be left floating in a thermally-isolated layout - the tab is the primary heat path. Avoid using IRLZ34NSTRLPBF above the 30 A continuous rating without active cooling or substantial copper; the part will enter thermal shutdown (or fail) well before that current if Ta exceeds 25 C. Finally, never drive the gate above the absolute maximum VGS of +/- 10 V (logic levels); use a gate-source Zener if the upstream driver can swing higher due to ringing.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

Pb-free and RoHS compliant per Infineon product page. JEDEC qualified. AEC-Q100 automotive qualification is not explicitly listed for this part - if AEC-Q100 is required for automotive designs, an Infineon automotive-grade alternative should be selected and verified.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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