IRF7469TRPBF vs IRF7380TRPBF Comparison

Detailed side-by-side comparison of IRF7469TRPBF by Infineon and IRF7380TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7469TRPBF IRF7380TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology IR MOSFET™ (HEXFET) IR MOSFET™ (Infineon HEXFET-style planar N-ch)
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) at TA=25°C 9 A —
Rds(on) Max at Vgs=10V 17 mΩ —
Total Gate Charge (Qg) 15 nC —
Gate-Source Voltage (Vgs) Max ±20 V —
Power Dissipation (Pd) at TA=25°C 2.5 W —
Operating Temperature Range -55°C to +150°C (Tj) —
Package 8-SO (SOIC-8) SO-8 (8-SO, SOIC-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) —
RoHS Status Compliant —
Lead-Free Yes —
Halogen Free Yes —
Channel Mode Enhancement —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7380TRPBF
Configuration — Dual N-Channel MOSFET Array (2 independent FETs in one package)
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 3.6 A
On-Resistance RDS(on) max — 73 mOhm at VGS = 10 V
Total Power Dissipation (PD) — 2 W
Operating Junction Temperature — -55 C to +150 C
Gate Drive Voltage (typical) — 10 V (full RDS(on)); logic-level not guaranteed
Lead-Free / RoHS — Yes (Pb-free plating, suffix PBF)
Packaging — Tape & Reel (suffix TR)
Primary Application — High-frequency DC-DC converters

Datasheets & Resources

Browse All Products Create BOM Request Quote