IRF7469TRPBF vs IRF7380TRPBF 比較

詳細並排比較 IRF7469TRPBF 由 Infineon 與 IRF7380TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF7469TRPBF IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon

IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon

IRF7469TRPBF ✓ 啟用中
Infineon
IRF7380TRPBF IRF7380TRPBF - Dual N-Ch 80V 3.6A MOSFET, SO-8 | Infineon

IRF7380TRPBF - Dual N-Ch 80V 3.6A MOSFET, SO-8 | Infineon

IRF7380TRPBF ✓ 啟用中

規格比較

參數 IRF7469TRPBF IRF7380TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology IR MOSFET™ (HEXFET) IR MOSFET™ (Infineon HEXFET-style planar N-ch)
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) at TA=25°C 9 A —
Rds(on) Max at Vgs=10V 17 mΩ —
Total Gate Charge (Qg) 15 nC —
Gate-Source Voltage (Vgs) Max ±20 V —
Power Dissipation (Pd) at TA=25°C 2.5 W —
工作溫度範圍 -55°C to +150°C (Tj) —
封裝 8-SO (SOIC-8) SO-8 (8-SO, SOIC-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) —
RoHS 狀態 Compliant —
Lead-Free Yes —
無鹵素 Yes —
Channel Mode Enhancement —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7380TRPBF
Configuration — Dual N-Channel MOSFET Array (2 independent FETs in one package)
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 3.6 A
On-Resistance RDS(on) max — 73 mOhm at VGS = 10 V
Total Power Dissipation (PD) — 2 W
工作接面溫度 — -55 C to +150 C
Gate Drive Voltage (typical) — 10 V (full RDS(on)); logic-level not guaranteed
Lead-Free / RoHS — Yes (Pb-free plating, suffix PBF)
Packaging — Tape & Reel (suffix TR)
Primary Application — High-frequency DC-DC converters

資料表與資源

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