IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon
MPN: IRF7469TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.71 | $7.10 |
| 100 | $0.58 | $58.00 |
| 500 | $0.49 | $245.00 |
| 1,000 | $0.42 | $420.00 |
| 3,000 | $0.37 | $1,110.00 |
Drop-in alternatives for IRF7469TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7469
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH7084TRPBF
✅ Drop-In✓ In Stock
$0.45 / Unit
View Datasheet →IRFH5020TRPBF
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSC097N06NSATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IRFR4105TRPBF
✅ Drop-In✓ In Stock
$0.58 / Unit
View Datasheet →IPB024N10N5ATMA1
✅ Drop-In✓ In Stock
$1.86 / Unit
View Datasheet →IRF7469TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | IR MOSFET™ (HEXFET) |
| Drain-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) at TA=25°C | 9 A |
| Rds(on) Max at Vgs=10V | 17 mΩ |
| Total Gate Charge (Qg) | 15 nC |
| Gate-Source Voltage (Vgs) Max | ±20 V |
| Power Dissipation (Pd) at TA=25°C | 2.5 W |
| Operating Temperature Range | -55°C to +150°C (Tj) |
| Package | 8-SO (SOIC-8) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| Channel Mode | Enhancement |
IRF7469TRPBF Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain terminal 1 |
| Pin 3 | Source — Source terminal 1 |
| Pin 4 | Source — Source terminal 2 |
| Pin 5 | Drain — Drain terminal 2 |
| Pin 6 | Drain — Drain terminal 3 |
| Pin 7 | Source — Source terminal 3 |
| Pin 8 | Source — Source terminal 4 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRF7469TRPBF is suitable for 6 applications: 12V Synchronous Buck Converter, High-Frequency Isolated DC-DC Converter Primary-Side Switch, Battery Protection and Hot-Swap Load Switch, Automotive 12V LED Lighting Driver, Motor Drive H-Bridge (Low-Side Switch), USB PD and Power Adapter Synchronous Rectification.
12V Synchronous Buck Converter
The IRF7469TRPBF functions as the low-side synchronous rectifier in 12V-to-3.3V/5V buck converters commonly used in telecom and industrial point-of-load regulators. With 17 mΩ Rds(on) at 10V Vgs and 15 nC total gate charge, it enables switching frequencies up to 500 kHz with manageable gate-drive losses. The 40V Vdss rating provides sufficient margin above the 12V rail plus inductive ringing, while the SO-8 footprint allows direct soldering onto standard 1 oz copper land patterns. Compared to older planar MOSFETs, the IR MOSFET™ process gives faster body-diode recovery, reducing dead-time losses in synchronous rectification topologies.
Recommended
High-Frequency Isolated DC-DC Converter Primary-Side Switch
The IRF7469TRPBF is rated by International Rectifier/Infineon specifically for high-frequency isolated DC-DC converter primary-side switching applications, where the MOSFET blocks half the reflected input voltage and switches at 100-500 kHz. The 15 nC Qg allows direct drive from small gate-drive transformers without excessive drive losses, while the 9A continuous current supports 30-50W converter power levels. The 40V Vdss accommodates 24V input buses with substantial margin. Design tip: place a 4.7Ω-10Ω gate resistor close to the gate pin to dampen the LC resonance between gate capacitance and transformer leakage inductance.
Recommended
Battery Protection and Hot-Swap Load Switch
The IRF7469TRPBF serves as the main disconnect switch in 2-3 cell lithium-ion battery protection circuits and 12V hot-swap controllers. Its 40V Vdss handles transient spikes from inductive loads and battery hot-plug events, while the ±20V Vgs rating tolerates gate-drive transients from protection ICs. The 17 mΩ Rds(on) limits continuous conduction loss to roughly 1.5W at 9A, allowing the SO-8 package to dissipate without exceeding thermal limits in typical 25°C ambient conditions. Designers typically parallel two IRF7469s for lower Rds(on) in 20A+ applications.
Recommended
Automotive 12V LED Lighting Driver
The IRF7469TRPBF is used as the main switching element in 12V automotive LED driver circuits for daytime running lights, interior lighting, and tail-light PWM dimming. Its 17 mΩ Rds(on) minimizes conduction loss when driving 1-3A LED strings, and the 40V rating handles load-dump transients up to 35V in automotive electrical environments. While not AEC-Q101 qualified, it is widely used in non-safety automotive applications. For mission-critical lighting requiring automotive qualification, the AUIRF7769L2TR provides a pin-compatible AEC-Q101 alternative in the same SO-8 footprint.
Recommended
Motor Drive H-Bridge (Low-Side Switch)
The IRF7469TRPBF is deployed as a low-side switch in small brushed DC motor H-bridges for pumps, fans, and small actuators in industrial and appliance applications. Its 9A continuous current supports motors up to roughly 60W mechanical output at 12V, while the 15 nC Qg allows PWM switching up to 25 kHz for smooth speed control. The 40V Vdss handles motor back-EMF spikes that can reach 2-3 times the supply voltage during commutation. Pair with IR2104STRPBF high-low side gate driver for full H-bridge control.
Recommended
USB PD and Power Adapter Synchronous Rectification
In USB Power Delivery adapters and 18-65W AC-DC converters, the IRF7469TRPBF serves as the secondary-side synchronous rectifier on the 5V/9V/12V/15V/20V output rail. Its 17 mΩ Rds(on) provides low conduction loss during continuous conduction mode (CCM) operation, and the 15 nC Qg enables switching at 65-100 kHz typical for QR/DCM flyback topologies. The 40V Vdss gives ample margin above the 20V USB PD voltage plus reflected leakage ringing. For higher-efficiency designs, modern OptiMOS alternatives with sub-5 nC Qrr reduce dead-time losses further.
Recommended
Recommended Products Summary
Engineering reference data for IRF7469TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7469 | IRFH7084TRPBF | IRFH5020TRPBF | BSC097N06NSATMA1 | IRFR4105TRPBF | IPB024N10N5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| Drain-Source Voltage (Vdss) | 40 V | 40 V | 40 V | 60 V | 60 V | 55 V | 100 V |
| Continuous Drain Current (Id) | 9 A | 9 A | 13 A | 32 A | 10 A | 27 A | 30 A |
| Rds(on) Max at Vgs=10V | 17 mΩ | 17 mΩ | 12 mΩ | 11 mΩ | 9.7 mΩ | 45 mΩ | 2.4 mΩ |
| Total Gate Charge (Qg) | 15 nC | 15 nC | 22 nC | [DATA_NEEDED] | 10 nC | 28 nC | [DATA_NEEDED] |
| Power Dissipation (TA=25°C) | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W |
| Technology | IR MOSFET™ (HEXFET) | IR MOSFET™ (HEXFET) | IR MOSFET™ | IR MOSFET™ | OptiMOS™ | IR MOSFET™ (HEXFET) | OptiMOS™ |
| Automotive Grade (AEC-Q101) | No | No | No | No | No | No | No |
Key Differentiators
- Mature IR MOSFET™ process with proven second-source (vs BSC097N06NSATMA1)
- Lower Qg than high-current alternatives (vs IRFH5020TRPBF)
- Right-sized 9A/40V envelope for 12V/24V designs (vs IPB024N10N5ATMA1)
Design Notes
Estimated: At continuous 9A on a 1 oz copper SO-8 land pattern with ~50°C/W RθJA, junction temperature rises ~75°C above ambient. Power dissipation = I² × Rds(on) × (1 + 0.005 × ΔT) ≈ 9² × 0.017 × 1.4 ≈ 1.93W at TA=25°C; derate to roughly 6A continuous at TA=70°C. Use maximum copper pour on drain and source pads, plus thermal vias to inner copper planes, to keep RθJA near 40°C/W for high-current applications.
The SO-8 footprint exposes drain and source across multiple pins (2-3-6-7 pattern). Connect all drain pins (2, 5, 6) directly to the switching node with a wide trace or copper pour to minimize parasitic inductance. Place the gate drive resistor within 5mm of pin 1 to dampen the LC resonance formed by gate capacitance and source-lead inductance, which can otherwise cause gate-oscillation in high-dv/dt switching.
Do not exceed Vgs of ±20V; gate-source ESD damage is a common failure mode when the gate pin is left floating during handling. Always include a 10kΩ gate-to-source pull-down resistor to keep the MOSFET off during controller start-up. When designing the snubber for inductive loads, remember the body-diode reverse recovery can cause voltage overshoot above Vdss — verify with worst-case dv/dt conditions on the bench.
At switching edges above 1V/ns, the drain-source voltage transition couples through Cgd (Miller capacitance) into the gate drive. Use a gate-drive supply with at least 1µF decoupling placed at the IC supply pin, and consider a gate-source capacitor of 1nF-10nF to slow the turn-on edge in noise-sensitive applications. For circuits where multiple MOSFETs share a gate driver, add individual 10Ω-47Ω gate resistors to prevent parallel-FET shoot-through.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100/AEC-Q101 qualified — use AUIRF7769L2TR for automotive applications. REACH and conflict-minerals compliance per Infineon supply-chain declarations.
