IRF7854TRPBF vs IRFH7440TRPBF Comparison

Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRFH7440TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7854TRPBF IRFH7440TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at Ta=25°C 10 A —
Power Dissipation (PD) at Ta=25°C 2.5 W —
On-Resistance RDS(on) max at VGS=10V 13.4 mΩ —
Gate-Source Threshold Voltage VGS(th) max 4.9 V —
Total Gate Charge Qg 27 nC —
Package SO-8 8-PQFN (5x6 mm) with exposed thermal pad
Mounting Type Surface Mount Surface Mount
Technology HEXFET (planar N-channel) StrongIRFET™ (HEXFET)
Operating Temperature Range -55°C to +150°C (TJ) —
Lead-Free / RoHS Yes (PBF suffix, lead-free) Lead-Free, RoHS Compliant (PBF suffix)
Qualification JEDEC industrial, Normal level JEDEC standard
Solder Process Reflow and wave-solderable —
Gate Drive Voltage (recommended) 10 V —
Continuous Drain Current (ID, Tc=25°C) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max at VGS=10V) — 2.4 mΩ
Gate-Source Voltage (VGS) — ±20 V
Total Gate Charge (Qg) — 92 nC
Power Dissipation (PD, Tc=25°C) — 104 W
Operating Junction Temperature — -55°C to +150°C
Gate Drive Optimization — 10V (Normal Level), switching < 100 kHz
MSL (Moisture Sensitivity Level) — MSL 1
Typical Applications — Brushed motor drive, DC-DC converters, solenoid/load switching

Datasheets & Resources

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