IRF8736TRPBF vs IRF7309TRPBF Comparison

Detailed side-by-side comparison of IRF8736TRPBF by Infineon and IRF7309TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8736TRPBF IRF7309TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.35
FET Type N-Channel β€”
Technology StrongIRFET / HEXFET IR HEXFET Generation V
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) at TA=25C 18 A β€”
Power Dissipation (PD) Max at TA=25C 2.5 W β€”
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V β€”
Gate Charge (Qg) Typical 17 nC β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package SO-8 (8-SO, MS-012AA) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55C to +150C (TJ)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (per JEDEC J-STD-020) MSL-1 (unlimited floor life per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) β€”
Configuration Single Dual N-Channel + P-Channel (Complementary)
Packaging Tape & Reel (TRPBF suffix) Tape & Reel
Polarity β€” N+P
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (N-channel, TA=25C) β€” 4 A
Continuous Drain Current (P-channel, TA=25C) β€” 3 A
On-Resistance (N-channel, max) β€” 50 mOhm
On-Resistance (P-channel, max) β€” [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) β€” 1.4 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Lead-Free Status β€” Yes (TRPBF suffix = Pb-free)
RoHS Status β€” Compliant

Datasheets & Resources

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