IRF8736TRPBF vs IRF7309TRPBF Perbandingan

Perbandingan bersamaan detil IRF8736TRPBF dari Infineon dan IRF7309TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF8736TRPBF IRF7309TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET / HEXFET IR HEXFET Generation V
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Paket SO-8 (8-SO, MS-012AA) 8-SO (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C (TJ)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Level MSL 1 (per JEDEC J-STD-020) MSL-1 (unlimited floor life per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single Dual N-Channel + P-Channel (Complementary)
Packaging Tape & Reel (TRPBF suffix) Tape & Reel
Polarity — N+P
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (N-channel, TA=25C) — 4 A
Continuous Drain Current (P-channel, TA=25C) — 3 A
On-Resistance (N-channel, max) — 50 mOhm
On-Resistance (P-channel, max) — [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) — 1.4 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Lead-Free Status — Yes (TRPBF suffix = Pb-free)
Status RoHS — Compliant

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon